Hynix HMT42GR7AFR4C-PBTD Datasheet

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Rev. 1.0 /Jun. 2013 1
240pin DDR3 SDRAM Registered DIMM
*SK hynix reserves the right to change products or specifications without notice.
DDR3 SDRAM Registered DIMM
Based on 4Gb A-die
HMT451R7AFR8C
HMT41GR7AFR8C
HMT41GR7AFR4C
HMT42GR7AFR4C
HMT84GR7AMR4C
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Summary of Contents

Page 1 - Based on 4Gb A-die

Rev. 1.0 /Jun. 2013 1 240pin DDR3 SDRAM Registered DIMM*SK hynix reserves the right to change products or specifications without notice.DDR3 SDRAM Re

Page 2 - Revision History

Rev. 1.0 / Jun. 2013 10 Registering Clock Driver SpecificationsCapacitance ValuesInput & Output Timing RequirementsSymbol Parameter Conditions Min

Page 3 - Ordering Information

Rev. 1.0 / Jun. 2013 11 On DIMM Thermal SensorThe DDR3 SDRAM DIMM temperature is monitored by integrated thermal sensor. The integrated thermal sensor

Page 4 - Address Table

Rev. 1.0 / Jun. 2013 12 Functional Block Diagram4GB, 512Mx72 Module(1Rank of x8)CB[7:0]DQS8DQS8DM8/DQS17DQS17RRASARCASARS0ARWEAPCK0APCK0ARCKE0ARODT0AA

Page 5 - Pin Descriptions

Rev. 1.0 / Jun. 2013 13 8GB, 1Gx72 Module(1Rank of x4) - page1RRASARCASARS0ARWEAPCK0APCK0ARCKE0ARODT0AA[O:N]AVtt/BA[O:N]ACB[3:0]DQS8DQS8DQSDQSDMD8DQ [

Page 6 - Symbol Type Polarity Function

Rev. 1.0 / Jun. 2013 14 8GB, 1Gx72 Module(1Rank of x4) - page2S0S1BA[N:0]A[N:0]RASCASWECKE0ODT0CK0CK0PAR_INRS0A →CS0: SDRAMs D[3:0], D[12:8], D17RS0B

Page 7

Rev. 1.0 / Jun. 2013 15 8GB, 1Gx72 Module(2Rank of x8) - page1DQSDQSTDQSTDQSD17DQ [7:0]ZQRASCASCSWECKCKCKEODTA[N:O]/BA[N:O]RRASARCASARS0ARWEAPCK0APCK0

Page 8 - Pin Assignments

Rev. 1.0 / Jun. 2013 16 8GB, 1Gx72(2Rank of x8) - page2S0S1BA[N:0]A[N:0]RASCASWECKE0ODT0CK0CK0PAR_INRS0A →CS0: SDRAMs D[3:0], D8RS0B → CS0: SDRAMs D[7

Page 9

Rev. 1.0 / Jun. 2013 17 16GB, 2Gx72 Module(2Rank of x4) - page1RRASARCASARS0ARWEAPCK0APCK0ARCKE0ARODT0AA[O:N]A/BA[O:N]ACB[7:4]DQS17DQS17DQSDQSDMD17DQ

Page 10 - Capacitance Values

Rev. 1.0 / Jun. 2013 18 16GB, 2Gx72 Module(2Rank of x4) - page2D0–D35VDDD0–D35VTTVDDSPDD0–D35VREFDQSPDVREFCAVSSD0–D35D0–D35Note:1. DQ-to-I/O wiring ma

Page 11 - On DIMM Thermal Sensor

Rev. 1.0 / Jun. 2013 19 16GB, 2Gx72 Module(2Rank of x4) - page3S0S1BA[N:0]A[N:0]RASCASWECKE0ODT0CK0CK0PAR_INRS0A →CS0: SDRAMs D[3:0], D[12:8], D17RS0B

Page 12 - Functional Block Diagram

Rev. 1.0 / Jun. 2013 2 Revision HistoryRevision No. History Draft Date Remark0.1 Initial Release Jul.20121.0 Added 1866Mbps for 4Rx4 &Change modul

Page 13 - Rev. 1.0 / Jun. 2013 13

Rev. 1.0 / Jun. 2013 20 32GB, 4Gx72 Module(4Rank of x4) - page1ZQARRASAARCASAARS0AARWEAAPCK0AAPCK0AARCKE0AARODT0AARA[N:O]AVtt/ARBA[N:O]ACB[3:0]DQS8DQS

Page 14 - Rev. 1.0 / Jun. 2013 14

Rev. 1.0 / Jun. 2013 21 32GB, 4Gx72 Module(4Rank of x4) - page2ZQARRASAARCASAARS0AARWEAAPCK0AAPCK0AARCKE0AARODT0AARA[N:O]AVtt/ARBA[N:O]ACB[7:4]DQS17DQ

Page 15

Rev. 1.0 / Jun. 2013 22 32GB, 4Gx72 Module(4Rank of x4) - page3ZQARRASBARCASBARS0BARWEBAPCK0BAPCK0BARCKE0BARODT0BARA[N:O]BVtt/ARBA[N:O]BDQ[35:32]DQS4D

Page 16 - Rev. 1.0 / Jun. 2013 16

Rev. 1.0 / Jun. 2013 23 32GB, 4Gx72 Module(4Rank of x4) - page4ZQARRASBARCASBARS0BARWEBAPCK0BAPCK0BARCKE0BARODT0BARA[N:O]BVtt/ARBA[N:O]BDQ[39:36]DQS13

Page 17 - Rev. 1.0 / Jun. 2013 17

Rev. 1.0 / Jun. 2013 24 32GB, 4Gx72 Module(4Rank of x4) - page5CK1CK1120Ω±5%S2S3BA[N:0]A[N:0]RASCASWECKE0CK0CK0PAR_INBRS2A →CS1: SDRAMs D45,D47,D49,D5

Page 18

Rev. 1.0 / Jun. 2013 25 Absolute Maximum RatingsAbsolute Maximum DC RatingsNotes:1. Stresses greater than those listed under “Absolute Maximum Ratings

Page 19 - Rev. 1.0 / Jun. 2013 19

Rev. 1.0 / Jun. 2013 26 AC & DC Operating ConditionsRecommended DC Operating ConditionsNotes:1. Under all conditions, VDDQ must be less than or eq

Page 20 - Rev. 1.0 / Jun. 2013 20

Rev. 1.0 / Jun. 2013 27 AC & DC Input Measurement LevelsAC and DC Logic Input Levels for Single-Ended SignalsAC and DC Input Levels for Single-End

Page 21 - Rev. 1.0 / Jun. 2013 21

Rev. 1.0 / Jun. 2013 28 AC and DC Input Levels for Single-Ended SignalsDDR3 SDRAM will support two Vih/Vil AC levels for DDR3-800 and DDR3-1066 as spe

Page 22 - Rev. 1.0 / Jun. 2013 22

Rev. 1.0 / Jun. 2013 29 Vref TolerancesThe dc-tolerance limits and ac-noise limits for the reference voltages VRefCA and VRefDQ are illustrated in fig

Page 23

Rev. 1.0 / Jun. 2013 3 DescriptionRegistered DDR3 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power

Page 24 - Rev. 1.0 / Jun. 2013 24

Rev. 1.0 / Jun. 2013 30 AC and DC Logic Input Levels for Differential SignalsDifferential signal definitionDefinition of differential ac-swing and “ti

Page 25 - Absolute Maximum Ratings

Rev. 1.0 / Jun. 2013 31 Differential swing requirements for clock (CK - CK) and strobe (DQS-DQS)Notes:1. Used to define a differential signal slew-rat

Page 26 - Rev. 1.0 / Jun. 2013 26

Rev. 1.0 / Jun. 2013 32 Single-ended requirements for differential signalsEach individual component of a differential signal (CK, DQS, DQSL, DQSU, CK,

Page 27 - Rev. 1.0 / Jun. 2013 27

Rev. 1.0 / Jun. 2013 33 Notes:1. For CK, CK use VIH/VIL (ac) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use VIH/VIL (ac) of DQs.2. VIH

Page 28 - Rev. 1.0 / Jun. 2013 28

Rev. 1.0 / Jun. 2013 34 Differential Input Cross Point VoltageTo guarantee tight setup and hold times as well as output skew parameters with respect t

Page 29 - Vref Tolerances

Rev. 1.0 / Jun. 2013 35 Slew Rate Definitions for Single-Ended Input SignalsSee 7.5 “Address / Command Setup, Hold and Derating” in “DDR3 Device Opera

Page 30

Rev. 1.0 / Jun. 2013 36 AC & DC Output Measurement LevelsSingle Ended AC and DC Output LevelsTable below shows the output levels used for measurem

Page 31 - Rev. 1.0 / Jun. 2013 31

Rev. 1.0 / Jun. 2013 37 Single Ended Output Slew RateWhen the Reference load for timing measurements, output slew rate for falling and rising edges is

Page 32 - Rev. 1.0 / Jun. 2013 32

Rev. 1.0 / Jun. 2013 38 Differential Output Slew RateWith the reference load for timing measurements, output slew rate for falling and rising edges is

Page 33 - Rev. 1.0 / Jun. 2013 33

Rev. 1.0 / Jun. 2013 39 Reference Load for AC Timing and Output Slew RateFigure below represents the effective reference load of 25 ohms used in defin

Page 34 - Rev. 1.0 / Jun. 2013 34

Rev. 1.0 / Jun. 2013 4 Key Parameters*SK hynix DRAM devices support optional downbinning to CL11, CL9 and CL7. SPD setting is programmed to match.Spee

Page 35 - ILdiffmax

Rev. 1.0 / Jun. 2013 40 Overshoot and Undershoot SpecificationsAddress and Control Overshoot and Undershoot SpecificationsAddress and Control Overshoo

Page 36 - Rev. 1.0 / Jun. 2013 36

Rev. 1.0 / Jun. 2013 41 Clock, Data, Strobe and Mask Overshoot and Undershoot SpecificationsClock, Data, Strobe and Mask Overshoot and Undershoot Defi

Page 37 - Single Ended Output Slew Rate

Rev. 1.0 / Jun. 2013 42 Refresh parameters by device densityNotes:1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determi

Page 38 - Differential Output Slew Rate

Rev. 1.0 / Jun. 2013 43 Standard Speed BinsDDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.DDR3-800 Spe

Page 39 - Rev. 1.0 / Jun. 2013 39

Rev. 1.0 / Jun. 2013 44 DDR3-1066 Speed BinsFor specific Notes See "Speed Bin Table Notes" on page 48.Speed Bin DDR3-1066FUnit NoteCL - nRCD

Page 40 - Rev. 1.0 / Jun. 2013 40

Rev. 1.0 / Jun. 2013 45 DDR3-1333 Speed BinsFor specific Notes See "Speed Bin Table Notes" on page 48.Speed Bin DDR3-1333HUnit NoteCL - nRCD

Page 41 - Rev. 1.0 / Jun. 2013 41

Rev. 1.0 / Jun. 2013 46 DDR3-1600 Speed BinsFor specific Notes See "Speed Bin Table Notes" on page 48.Speed Bin DDR3-1600KUnit NoteCL - nRCD

Page 42 - Rev. 1.0 / Jun. 2013 42

Rev. 1.0 / Jun. 2013 47 DDR3-1866 Speed BinsFor specific Notes See "Speed Bin Table Notes" on page 48.Speed Bin DDR3-1866MUnit NoteCL - nRCD

Page 43 - Standard Speed Bins

Rev. 1.0 / Jun. 2013 48 Speed Bin Table NotesAbsolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V); 1. The CL setting and CWL setting result i

Page 44 - DDR3-1066 Speed Bins

Rev. 1.0 / Jun. 2013 49 Environmental ParametersNote: 1. Stress greater than those listed may cause permanent damage to the device. This is a stress r

Page 45 - DDR3-1333 Speed Bins

Rev. 1.0 / Jun. 2013 5 Pin DescriptionsPin Name DescriptionNumberPin Name DescriptionNumberCK0 Clock Input, positive line 1 ODT[1:0] On Die Terminat

Page 46 - DDR3-1600 Speed Bins

Rev. 1.0 / Jun. 2013 50 IDD and IDDQ Specification Parameters and Test ConditionsIDD and IDDQ Measurement ConditionsIn this chapter, IDD and IDDQ meas

Page 47 - DDR3-1866 Speed Bins

Rev. 1.0 / Jun. 2013 51 Figure 1 - Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements[Note: DIMM level Output test load conditio

Page 48 - Speed Bin Table Notes

Rev. 1.0 / Jun. 2013 52 Table 1 -Timings used for IDD and IDDQ Measurement-Loop PatternsTable 2 -Basic IDD and IDDQ Measurement ConditionsSymbolDDR3-1

Page 49 - Environmental Parameters

Rev. 1.0 / Jun. 2013 53 IDD2NPrecharge Standby CurrentCKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, A

Page 50 - IHAC(max)

Rev. 1.0 / Jun. 2013 54 IDD4ROperating Burst Read CurrentCKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between RD; Com

Page 51 - Rev. 1.0 / Jun. 2013 51

Rev. 1.0 / Jun. 2013 55 a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00Bb) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_No

Page 52 - Rev. 1.0 / Jun. 2013 52

Rev. 1.0 / Jun. 2013 56 Table 3 - IDD0 Measurement-Loop Patterna)a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.b) DQ signals are MID-L

Page 53 - Symbol Description

Rev. 1.0 / Jun. 2013 57 Table 4 - IDD1 Measurement-Loop Patterna)a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, ot

Page 54

Rev. 1.0 / Jun. 2013 58 Table 5 - IDD2N and IDD3N Measurement-Loop Patterna)a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.b) DQ signal

Page 55

Rev. 1.0 / Jun. 2013 59 Table 7 - IDD4R and IDDQ4R Measurement-Loop Patterna)a) DM must be driven LOW all the time. DQS, DQS are used according to RD

Page 56 - Rev. 1.0 / Jun. 2013 56

Rev. 1.0 / Jun. 2013 6 Input/Output Functional DescriptionsSymbol Type Polarity FunctionCK0 INPositiveLinePositive line of the differential pair of sy

Page 57 - Rev. 1.0 / Jun. 2013 57

Rev. 1.0 / Jun. 2013 60 Table 9 - IDD5B Measurement-Loop Patterna)a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.b) DQ signals are MID-

Page 58 - Rev. 1.0 / Jun. 2013 58

Rev. 1.0 / Jun. 2013 61 Table 10 - IDD7 Measurement-Loop Patterna)ATTENTION! Sub-Loops 10-19 have inverse A[6:3] Pattern and Data Pattern than Sub-Loo

Page 59 - Rev. 1.0 / Jun. 2013 59

Rev. 1.0 / Jun. 2013 62 IDD Specifications (Tcase: 0 to 95oC)* Module IDD values in the datasheet are only a calculation based on the component IDD sp

Page 60 - Rev. 1.0 / Jun. 2013 60

Rev. 1.0 / Jun. 2013 63 8GB, 1G x 72 R-DIMM: HMT41GR7AFR8C16GB, 2G x 72 R-DIMM: HMT42GR7AFR4CSymbol DDR3 1333 DDR3 1600 DDR3 1866 Unit noteIDD0 1277 1

Page 61

Rev. 1.0 / Jun. 2013 64 32GB, 4G x 72 R-DIMM: HMT84GR7AMR4CSymbol DDR3 1066 DDR3 1333 DDR3 1600 DDR3 1866 Unit noteIDD0 2474 2510 3122 3194 mAIDD1 261

Page 62 - Rev. 1.0 / Jun. 2013 62

Rev. 1.0 / Jun. 2013 65 Module Dimensions512Mx72 - HMT451R7AFR8C5.175Detail C2.10±0.1547.0071.002X3.00±0.10Front130.009.5017.301205.011240121Back133.3

Page 63 - Rev. 1.0 / Jun. 2013 63

Rev. 1.0 / Jun. 2013 66 1Gx72 - HMT41GR7AFR4C5.175Detail BDetail C2.10±0.1547.0071.002X3.00±0.10Front14X3.00±0.101205.011240121Back133.35128.95Registe

Page 64 - Rev. 1.0 / Jun. 2013 64

Rev. 1.0 / Jun. 2013 67 1Gx72 - HMT41GR7AFR8C5.175Detail BDetail C2.10±0.1547.0071.002X3.00±0.10Front14X3.00±0.101205.011240121Back133.35128.95Registe

Page 65 - Module Dimensions

Rev. 1.0 / Jun. 2013 68 2Gx72 - HMT42GR7AFR4C30.009.5017.3023.305.175Detail CDetail D2.10±0.1547.0071.002X3.00±0.10Front11205.011240121Back133.35128.9

Page 66 - Units: millimeters

Rev. 1.0 / Jun. 2013 69 2Gx72 - HMT42GR7AFR4C - Heat SpreaderFront30.20120Back133.3522.00RegisteringClock Driver127121RegisteringClock Driver1.27±010m

Page 67

Rev. 1.0 / Jun. 2013 7 DQS[17:0] I/OPositiveEdgePositive line of the differential data strobe for input and output data.DQS[17:0]I/ONegativeEdgeNegati

Page 68

Rev. 1.0 / Jun. 2013 70 4Gx72 - HMT84GR7AMR4C30.009.5017.3023.305.175Detail CDetail D2.10±0.1547.0071.002X3.00±0.10Front11205.011240121Back133.35128.9

Page 69 - 33.4 33.4

Rev. 1.0 / Jun. 2013 71 4Gx72 - HMT84GR7AMR4C - Heat SpreaderFront30.20120Back133.3522.00RegisteringClock Driver127121RegisteringClock Driver1.27±010m

Page 70

Rev. 1.0 / Jun. 2013 8 Pin AssignmentsPin #Front Side(left 1–60)Pin #Back Side(right 121–180)Pin #Front Side(left 61–120)Pin #Back Side(right 181–240)

Page 71

Rev. 1.0 / Jun. 2013 9 32VSS152DM3,DQS12,TDQS1292VSS212DM5,DQS14,TDQS1433 DQS3153NC,DQS12,TDQS1293 DQS5 213NC,DQS14,TDQS1434 DQS3 154VSS94 DQS5 214VSS

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